Fabrication of GaAs/AlGaAs Quantum Well Lasers with MeV Oxygen Ion Implantation

FABRICATION OF GaAs/ AlGaAs QUANTUM WELL LASERS WITH MeV OXYGEN ION IMPLANTATION*

Me V oxygen ion implantation in GaAs/ AlGaAs has been shown to provide a simple and very promising technique for quantum well laser fabrication. A lOμm stripe single quantum well (SQW) graded-index separation confinement heterostructure (GRINSCH) laser made in this way has achieved high performance with high quantum differential efficiency, low threshold current and good electrical isolation ch...

Two-dimensional simulation of quantum well lasers

We describe a two-dimensional model for quantum-well lasers that solves self-consistently the electrical and optical equations. The model includes a wavelengthand position-dependent gain function which is derived from a quantum-mechanical calculation. We have also incorporated the effects of strain into the model, through an anisotropic parabolic band approximation of the band structure from a ...

High-Resolution Ion Implantation from keV to MeV

Electron transport in AlGaInP quantum well lasers

Energy storage in quantum-well lasers.

A new scheme of energy storage in single-quantum-well semiconductor lasers is analyzed. This scheme involves the storage of the majority of injected carriers in the continuum states of the surrounding bulk material, in which the carrier density is diluted and the higher-order carrier-density-dependent recombination processes are much smaller. This allows the inversion level to build up to a muc...